Zhudong, Taiwan

Pei-Yin Liou

This inventor holds 2 USPTO granted patents. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015-2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pei-Yin Liou. Retrieved from https://idiyas.com/inventor/pei-yin-liou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 5.0

ph-index = 2

Forward Citations = 13(Granted Patents)


Company Filing History:


Years Active: 2015-2017

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2 patents (USPTO):Explore Patents

Title: Pei-Yin Liou: Innovating Semiconductor Processing Technology

Introduction: Pei-Yin Liou is a remarkable inventor based in Zhudong, Taiwan, known for his significant contributions to semiconductor device processing. With two patents to his name, Liou has made profound advancements in methods that enhance the manufacturing of integrated circuits.

Latest Patents: Pei-Yin Liou's latest innovations include the patent titled "Method and apparatus for back end of line semiconductor device processing." This method involves forming an opening through a dielectric layer and an underlying etching stop layer to expose a metal line. A key aspect of this innovation is the simultaneous catalytic growth of a graphene layer on the exposed surface of the metal line while depositing an amorphous carbon layer on the sidewalls of the opening. His second patent in this domain also addresses back-end line processes for integrated circuit fabrication, where a barrier layer is formed within an opening for a metal contact. The innovative aspect here is the creation of a barrier layer combining graphene material in the bottom part and amorphous carbon material on the side part, all formed concurrently.

Career Highlights: Liou has made significant strides in his career, working with Taiwan Semiconductor Manufacturing Company Ltd. Here, he has honed his skills in developing methods that improve the efficiency and effectiveness of semiconductor processing.

Collaborations: Throughout his career, Pei-Yin Liou has collaborated with notable colleagues such as Shin-Yi Yang and Hsiang-Huan Lee. These collaborations have aimed at pushing the boundaries of semiconductor technology and enhancing the quality of integrated circuits.

Conclusion: Pei-Yin Liou's innovative contributions to semiconductor device processing demonstrate his commitment to advancing technology within this vital industry. His patented methods serve as a cornerstone in the evolution of semiconductor manufacturing, and his collaborative spirit with fellow inventors continues to inspire progress and innovation.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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