The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Dec. 12, 2008
Jian Wang, Shanghai, CN;
Sunny Voha Nuch, Shanghai, CN;
Liangzhi Xie, Shanghai, CN;
Junping Wu, Shanghai, CN;
Zhaowei Jia, Shanghai, CN;
Yunwen Huang, Shanghai, CN;
Zhifeng Gao, Shanghai, CN;
Hui Wang, Shanghai, CN;
Jian Wang, Shanghai, CN;
Sunny Voha Nuch, Shanghai, CN;
Liangzhi Xie, Shanghai, CN;
Junping Wu, Shanghai, CN;
Zhaowei Jia, Shanghai, CN;
Yunwen Huang, Shanghai, CN;
Zhifeng Gao, Shanghai, CN;
Hui Wang, Shanghai, CN;
ACM Research (Shanghai) Inc., Shanghai, CN;
Abstract
A method for cleaning semiconductor substrate using ultra/mega sonic device comprising holding a semiconductor substrate by using a chuck, positioning a ultra/mega sonic device adjacent to the semiconductor substrate, injecting chemical liquid on the semiconductor substrate and gap between the semiconductor substrate and the ultra/mega sonic device, changing gap between the semiconductor substrate and the ultra/mega sonic device for each rotation of the chuck during the cleaning process. The gap can be increased or reduced by 0.5λ/N for each rotation of the chuck, where λ is wavelength of ultra/mega sonic wave, N is an integer number between 2 and 1000. The gap is varied in the range of 0.5λn during the cleaning process, where λ is wavelength of ultra/mega sonic wave, and n is an integer number starting from 1.