The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Dec. 23, 2014
Applicants:

Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);

Dow Global Technologies Llc, Midland, MI (US);

Rohm and Haas Electronic Materials Korea Ltd., Chungcheon-do, KR;

Inventors:

Jae Hwan Sim, Kyonggi-do, KR;

Jin Hong Park, Busan, KR;

Jae-Bong Lim, Chung-Nam, KR;

Jung Kyu Jo, Ulsan, KR;

Cheng-Bai Xu, Southborough, MA (US);

Jong Keun Park, Westborough, MA (US);

Mingqi Li, Shrewsbury, MA (US);

Phillip D. Hustad, Natick, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/31058 (2013.01);
Abstract

Gap-fill methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a non-crosslinked crosslinkable polymer, an acid catalyst, a crosslinker and a solvent, wherein the crosslinkable polymer comprises a first unit of the following general formula (I): wherein: Ris chosen from hydrogen, fluorine, C-Calkyl and C-Cfluoroalkyl; and Aris an optionally substituted aryl group that is free of crosslinkable groups; and a second unit of the following general formula (II): wherein: Ris chosen from hydrogen, fluorine, C-Calkyl and C-Cfluoroalkyl; and Ris chosen from optionally substituted Cto Clinear, branched or cyclic alkyl, and optionally substituted Cto Caryl, optionally containing heteroatoms, wherein at least one hydrogen atom is substituted with a functional group independently chosen from hydroxyl, carboxyl, thiol, amine, epoxy, alkoxy, amide and vinyl groups; and (c) heating the gap-fill composition at a temperature to cause the polymer to crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.


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