The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Jan. 14, 2016
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Jen-Sheng Yang, Keelung, TW;
Chih-Yang Chang, Yuanlin Township, TW;
Chin-Chieh Yang, New Taipei, TW;
Kuo-Chi Tu, Hsin-Chu, TW;
Sheng-Hung Shih, Hsinchu, TW;
Wen-Ting Chu, Kaohsiung, TW;
Yu-Wen Liao, New Taipei, TW;
Manish Kumar Singh, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to an integrated circuit, which includes a semiconductor substrate and an interconnect structure disposed over the semiconductor substrate. The interconnect structure includes a lower metal layer, an intermediate metal layer disposed over the lower metal layer, and an upper metal layer disposed over the intermediate metal layer. An upper surface of the lower metal layer and a lower surface of the intermediate metal layer are spaced vertically apart by a first distance. A resistive random access memory (RRAM) cell is arranged between the lower metal layer and the upper metal layer. The RRAM cell includes a bottom electrode and a top electrode which are separated by a data storage layer having a variable resistance. The data storage layer vertically spans a second distance that is greater than the first distance.