The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Dec. 28, 2015
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chih-Tsung Shih, Hsinchu, TW;
Tien-Hsi Lee, Zhongli, TW;
Chia-Jen Chen, Jhudong Township, TW;
Shang-Chieh Chien, New Taipei, TW;
Shinn-Sheng Yu, Hsinchu, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Anthony Yen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
The present disclosure relates to a method of forming an extreme ultraviolet (EUV) pellicle having an pellicle film connected to a pellicle frame without a supportive mesh, and an associated apparatus. In some embodiments, the method is performed by forming a cleaving plane within a substrate. A pellicle frame is attached to an upper surface of the substrate, and the substrate is cleaved along the cleaving plane to form a pellicle film attached to the pellicle frame. The method forms the pellicle without using a support structure, which may block EUV radiation and cause substantial non-uniformities in the intensity of EUV radiation incident on an EUV reticle.