The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 14, 2016
Filed:
Dec. 29, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chih-Wei Chang, Hsin-Chu, TW;
Hung-Chang Hsu, Hsin-Chu, TW;
Chun-Hsien Huang, Hsin-Chu, TW;
Yu-Hung Lin, Hsin-Chu, TW;
Li-Wei Chu, Hsin-Chu, TW;
Sheng-Hsuan Lin, Hsin-Chu, TW;
Wei-Jung Lin, Hsin-Chu, TW;
Yu-Shiuan Wang, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method includes etching a dielectric layer to form an opening, with an underlying region underlying the dielectric layer exposed to the opening, and performing a bombardment to bombard a surface region of the underlying region through the opening. After the bombardment, the surface region is reacted with a process gas to form a reaction layer. An anneal is then performed to remove the reaction layer.