The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 02, 2016
Filed:
Jan. 17, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Hsiao Yun Lo, Hsin-Chu, TW;
Lin-Chih Huang, Wuri Township, TW;
Tasi-Jung Wu, Hsin-Chu, TW;
Hsin-Yu Chen, Taipei, TW;
Yung-Chi Lin, Su-Lin, TW;
Ku-Feng Yang, Dali, TW;
Tsang-Jiuh Wu, Hsin-Chu, TW;
Wen-Chih Chiou, Zhunan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An apparatus comprises a dielectric layer formed on a first side of a substrate, a first side interconnect structure comprising a first metal line and a pad formed in the dielectric layer, wherein the pad comprises a bottom portion formed of a first conductive metal and an upper portion formed of a second conductive metal, and wherein sidewalls of the upper portion are surrounded by the bottom portion and a top surface of the pad is coplanar with a top surface of the first metal line and a passivation layer formed over the dielectric layer, wherein the first metal line is embedded in the passivation layer.