The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 09, 2015

Filed:

May. 28, 2013
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Nicholas Vincent Licausi, Watervliet, NY (US);

Errol Todd Ryan, Clifton Park, NY (US);

Ming He, Slingerlands, NY (US);

Moosung M. Chae, Englewood Cliffs, NJ (US);

Kunaljeet Tanwar, Slingerlands, NY (US);

Larry Zhao, Niskayuna, NY (US);

Christian Witt, Woodbridge, CT (US);

Ailian Zhao, Slingerlands, NY (US);

Sean X. Lin, Watervliet, NY (US);

Xunyuan Zhang, Albany, NY (US);

Assignee:

GLOBAL FOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/314 (2006.01); H01L 21/308 (2006.01); H01L 21/32 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/314 (2013.01); H01L 21/308 (2013.01); H01L 21/32 (2013.01); H01L 29/06 (2013.01);
Abstract

A process is provided for methods of reducing damage to an ultra-low k layer during fabrication. In one aspect, a method includes: providing a cured ultra-low k film containing pores filled with a pore-stuffing material; and modifying an exposed surface of the ultra-low k film to provide a modified layer in the ultra-low k film. In another aspect, a semiconductor device comprising a modified layer on a surface of an ultra-low k film is provided.


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