The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Sep. 04, 2014
Applicant:

Jsr Corporation, Tokyo, JP;

Inventors:

Yushi Matsumura, Tokyo, JP;

Shinya Minegishi, Tokyo, JP;

Satoru Murakami, Tokyo, JP;

Yusuke Anno, Tokyo, JP;

Shinya Nakafuji, Tokyo, JP;

Kazuhiko Komura, Tokyo, JP;

Kyoyu Yasuda, Tokyo, JP;

Assignee:

JSR CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/027 (2006.01); G03F 7/11 (2006.01); B44C 1/22 (2006.01); C07D 407/12 (2006.01); C07D 487/04 (2006.01); H05K 1/00 (2006.01); G03F 7/004 (2006.01);
U.S. Cl.
CPC ...
G03F 7/027 (2013.01); G03F 7/11 (2013.01); B44C 1/22 (2013.01); C07D 407/12 (2013.01); C07D 487/04 (2013.01); H05K 1/00 (2013.01); G03F 7/004 (2013.01);
Abstract

Providing a method for forming a pattern capable of forming a resist underlayer film that can be easily removed using an alkali liquid while maintaining etching resistance is objected to. Provided by the present invention is a method for forming a pattern, the method including: (1) forming a resist underlayer film on a substrate using a composition for forming a resist underlayer film containing a compound having an alkali-cleavable functional group; (2) forming a resist pattern on the resist underlayer film; (3) forming a pattern on the substrate by dry etching of the resist underlayer film and the substrate, using the resist pattern as a mask; and (4) removing the resist underlayer film with an alkali liquid.


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