The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2015
Filed:
Jan. 10, 2014
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Nai-Wei Liu, Fengshan, TW;
Zhen-Cheng Wu, Hsinchu, TW;
Cheng-Lin Huang, Hsinchu, TW;
Po-Hsiang Huang, Taipei, TW;
Yung-Chih Wang, Taoyuan, TW;
Shu-Hui Su, Tucheng, TW;
Dian-Hau Chen, Hsinchu, TW;
Yuh-Jier Mii, Hsinchu, TW;
Abstract
A method of making a semiconductor device includes forming a dielectric layer over a semiconductor substrate. The method further includes forming a copper-containing layer in the dielectric layer, wherein the copper-containing layer has a first portion and a second portion. The method further includes forming a first barrier layer between the first portion of the copper-containing layer and the dielectric layer. The method further includes forming a second barrier layer at a boundary between the second portion of the copper-containing layer and the dielectric layer wherein the second barrier layer is adjacent to an exposed portion of the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer, and a boundary between a sidewall of the copper-containing layer and the first barrier layer is free of the second barrier layer.