The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2015
Filed:
Jul. 18, 2013
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Cheng-Tung Lin, Hsinchu County, TW;
Teng-Chun Tsai, Hsinchu, TW;
Li-Ting Wang, Tainan, TW;
Chi-Yuan Chen, Hsinchu, TW;
Hong-Mao Lee, Hsinchu, TW;
Hui-Cheng Chang, Tainan, TW;
Wei-Jung Lin, Taipei, TW;
Bing-Hung Chen, New Taipei, TW;
Chia-Han Lai, Hsinchu County, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu Science Park, Hsinchu, TW;
Abstract
Systems and methods are provided for reducing a contact resistivity associated with a semiconductor device structure. A substrate including a semiconductor region is provided. One or more dielectric layers are formed on the semiconductor region, the one or more dielectric layers including an element. A gaseous material is applied on the one or more dielectric layers to change a concentration of the element in the one or more dielectric layers. A contact layer is formed on the one or more dielectric layers to generate a semiconductor device structure. The semiconductor device structure includes the contact layer, the one or more dielectric layers, and the semiconductor region. A contact resistivity associated with the semiconductor device structure is reduced by changing the concentration of the element in the one or more dielectric layers.