The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8888950 B1

Date of Patent:

Nov. 18, 2014

Filed:

Mar. 13, 2008

Apparatus for plasma processing and method for plasma processing

Applicants:

Kyung Ho Lee, Gyeonggi-Do, KR;

Jae Ho Guahk, Gyeonggi-do, KR;

Jae Chul Choi, Gyeonggi-do, KR;

Young Ki Han, Seoul, KR;

Hee SE Lee, Gyeonggi-do, KR;

Yong Hwan Lim, Jeollabuk-Do, KR;

Kwan Goo Rha, Gyeonggi-do, KR;

Seng Hyun Chung, Gyeonggi-do, KR;

Sun Q Jeon, Gyeonggi-do, KR;

Jung Hee Lee, Incheon, KR;

Inventors:

Kyung Ho Lee, Gyeonggi-Do, KR;

Jae Ho Guahk, Gyeonggi-do, KR;

Jae Chul Choi, Gyeonggi-do, KR;

Young Ki Han, Seoul, KR;

Hee Se Lee, Gyeonggi-do, KR;

Yong Hwan Lim, Jeollabuk-Do, KR;

Kwan Goo Rha, Gyeonggi-do, KR;

Seng Hyun Chung, Gyeonggi-do, KR;

Sun Q Jeon, Gyeonggi-do, KR;

Jung Hee Lee, Incheon, KR;

Assignee:

Charm Engineering Co., Ltd., , KR;

Attorney:

Primary Examiner:

Maureen Gramaglia

Int. Cl.

CPC ...

C23F 1/00 (2006.01); H01L 21/306 (2006.01); H01L 21/687 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01);

U.S. Cl.

CPC ...

H01L 21/67069 (2013.01); H01L 21/68742 (2013.01); H01J 37/32431 (2013.01); H01L 21/0209 (2013.01); H01J 2237/20 (2013.01); H01L 21/68735 (2013.01);

Abstract

There is provided a substrate supporter capable of securely supporting a substrate such as a wafer on which a device having a predetermined thin film pattern is formed to remove various impurities formed on the rear surface of the substrate, and a plasma processing apparatus having the same. The plasma processing apparatus includes: at least one arm; and a supporting portion extending from the arm toward a substrate seating position of the substrate, so that the plasma processing apparatus can reduce the likelihood of arc discharges compared with conventional dry etching to increase process yield and product reliability, and ensure stable mounting of a substrate.

Find Patent Forward Citations

Lee, Kyung. (2014). Apparatus for plasma processing and method for plasma processing (U.S. Patent No. 8888950). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8888950

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