The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2014
Filed:
Feb. 21, 2012
Chi-mao Hsu, Tainan, TW;
Hsin-fu Huang, Tainan, TW;
Min-chuan Tsai, New Taipei, TW;
Chien-hao Chen, Yun-Lin County, TW;
Wei-yu Chen, Tainan, TW;
Chin-fu Lin, Tainan, TW;
Jing-gang LI, Singapore, SG;
Min-hsien Chen, Hsinchu County, TW;
Jian-hong Su, Singapore, SG;
Chi-Mao Hsu, Tainan, TW;
Hsin-Fu Huang, Tainan, TW;
Min-Chuan Tsai, New Taipei, TW;
Chien-Hao Chen, Yun-Lin County, TW;
Wei-Yu Chen, Tainan, TW;
Chin-Fu Lin, Tainan, TW;
Jing-Gang Li, Singapore, SG;
Min-Hsien Chen, Hsinchu County, TW;
Jian-Hong Su, Singapore, SG;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method for filling a trench with a metal layer is disclosed. A deposition apparatus having a plurality of supporting pins is provided. A substrate and a dielectric layer disposed thereon are provided. The dielectric layer has a trench. A first deposition process is performed immediately after the substrate is placed on the supporting pins to form a metal layer in the trench, wherein during the first deposition process a temperature of the substrate is gradually increased to reach a predetermined temperature. When the temperature of the substrate reaches the predetermined temperature, a second deposition process is performed to completely fill the trench with the metal layer. The present invention further provides a semiconductor device having an aluminum layer with a reflectivity greater than 1, wherein the semiconductor device is formed by using the method.