IDiyas

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8846163 B1

PDFFull Text
Date of Patent:
Sep. 30, 2014

Filed:

Jun. 05, 2012

Method for removing oxides

Applicants:

Chien-teh Kao, Sunnyvale, CA (US);

Jing-pei (Connie) Chou, Sunnyvale, CA (US);

Chiukin (Steven) Lai, Sunnyvale, CA (US);

Sal Umotoy, Antioch, CA (US);

Joel M. Huston, San Jose, CA (US);

Son Trinh, Cupertino, CA (US);

Mei Chang, Saragoga, CA (US);

Xiaoxiong (John) Yuan, San Jose, CA (US);

Yu Chang, San Jose, CA (US);

Xinliang LU, Sunnyvale, CA (US);

Wei W. Wang, Santa Clara, CA (US);

See-eng Phan, San Jose, CA (US);

Inventors:

Chien-Teh Kao, Sunnyvale, CA (US);

Jing-Pei (Connie) Chou, Sunnyvale, CA (US);

Chiukin (Steven) Lai, Sunnyvale, CA (US);

Sal Umotoy, Antioch, CA (US);

Joel M. Huston, San Jose, CA (US);

Son Trinh, Cupertino, CA (US);

Mei Chang, Saragoga, CA (US);

Xiaoxiong (John) Yuan, San Jose, CA (US);

Yu Chang, San Jose, CA (US);

Xinliang Lu, Sunnyvale, CA (US);

Wei W. Wang, Santa Clara, CA (US);

See-Eng Phan, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Patterson & Sheridan, LLP

Primary Examiner:

Michael Wieczorek

Int. Cl.
CPC ...
B05D 3/06 (2006.01); H05B 3/00 (2006.01); C23C 16/00 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02104 (2013.01); H01J 37/32522 (2013.01); H01J 37/32082 (2013.01); H01J 37/32357 (2013.01); H01J 2237/2001 (2013.01); H01L 21/67109 (2013.01); H01L 21/67069 (2013.01);
Abstract

A method for removing native oxides from a substrate surface is provided. In one embodiment, the method comprises positioning a substrate having an oxide layer into a processing chamber, exposing the substrate to a gas mixture while forming a volatile film on the substrate and maintaining the substrate at a temperature below 65° C., heating the substrate to a temperature of at least about 75° C. to sublimate the volatile film and remove the oxide layer, and depositing a first layer on the substrate after heating the substrate.

Find Patent Forward Citations

Loading…