The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2014
Filed:
Mar. 19, 2012
Yasushi Higuchi, Shizuoka, JP;
Toshimitsu Uehigashi, Shizuoka, JP;
Kazuhiro Sonoda, Shizuoka, JP;
Harunori Ushikawa, Shizuoka, JP;
Naoki Hanada, Shizuoka, JP;
Yasushi Higuchi, Shizuoka, JP;
Toshimitsu Uehigashi, Shizuoka, JP;
Kazuhiro Sonoda, Shizuoka, JP;
Harunori Ushikawa, Shizuoka, JP;
Naoki Hanada, Shizuoka, JP;
Ulvac, Inc., Kanagawa, JP;
Abstract
The method for the formation of a silicide film herein provided comprises the steps of forming an Ni film on the surface of a substrate mainly composed of Si and then heat-treating the resulting Ni film to thus form an NiSi film as an upper layer of the substrate, wherein, prior to the heat-treatment for the formation of the NiSi film, the Ni film is subjected to a preannealing treatment using Hgas at a temperature which is less than the heat-treatment temperature and which never causes the formation of any NiSi film in order to remove any impurity present in the Ni film, and the resulting Ni film is then subjected to a silicide-annealing treatment to thus form the NiSi film.