This inventor holds 2 USPTO granted patents. Top assignee: Ulvac, Inc.. Active years: 2014.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2014
Title: Naoki Hanada: Innovator in Film-Forming Technologies
Introduction
Naoki Hanada is a prominent inventor based in Shizuoka, Japan. He has made significant contributions to the field of film-forming technologies, particularly in the semiconductor industry. His innovative methods have led to advancements in the formation of nickel silicide films, which are crucial for various electronic applications.
Latest Patents
Hanada holds two notable patents that showcase his expertise. The first patent details a method for forming an NiSi film, which involves a preannealing treatment to remove impurities from the nickel film before heat treatment. The second patent outlines a method for forming an Ni film using a chemical vapor deposition (CVD) technique, where the temperature of the silicon substrate is carefully controlled within a specific range.
Career Highlights
Naoki Hanada is associated with Ulvac, Inc., a company known for its cutting-edge technologies in vacuum processing and film formation. His work has been instrumental in enhancing the efficiency and quality of film deposition processes, which are vital for the production of semiconductor devices.
Collaborations
Hanada collaborates with esteemed colleagues such as Toshimitsu Uehigashi and Yasushi Higuchi. Their combined expertise contributes to the innovative research and development efforts at Ulvac, Inc.
Conclusion
Naoki Hanada's contributions to film-forming technologies have positioned him as a key figure in the semiconductor industry. His patents reflect a commitment to innovation and excellence in the field.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile