The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Apr. 12, 2012
Toshimitsu Uehigashi, Shizuoka, JP;
Yasushi Higuchi, Shizuoka, JP;
Michio Ishikawa, Shizuoka, JP;
Harunori Ushikawa, Shizuoka, JP;
Naoki Hanada, Shizuoka, JP;
Toshimitsu Uehigashi, Shizuoka, JP;
Yasushi Higuchi, Shizuoka, JP;
Michio Ishikawa, Shizuoka, JP;
Harunori Ushikawa, Shizuoka, JP;
Naoki Hanada, Shizuoka, JP;
Ulvac, Inc., Kanagawa, JP;
Abstract
A method for the formation of an Ni film is herein disclosed, which comprises the steps of maintaining the temperature of an Si substrate at a desired level in a vacuum chamber; introducing, into the vacuum chamber, a nickel alkylamidinate (in this organometal compound, the alkyl group is a member selected from the group consisting of a methyl group, an ethyl group, a butyl group and a propyl group), Hgas and NHgas; and then forming an Ni film according to the CVD technique, wherein the film-forming temperature is set at a level between higher than 280° C. and not higher than 350° C.