Shizuoka, Japan

Harunori Ushikawa

USPTO Granted Patents = 9 


Average Co-Inventor Count = 4.3

ph-index = 1

Forward Citations = 5(Granted Patents)


Location History:

  • Shizuoka-ken, JP (2012 - 2014)
  • Shizuoka, JP (2013 - 2014)

Company Filing History:


Years Active: 2012-2014

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9 patents (USPTO):Explore Patents

Title: **Harunori Ushikawa: Innovator in Film-Forming Technologies**

Introduction

Harunori Ushikawa, an esteemed inventor based in Shizuoka, Japan, has made significant contributions in the field of film-forming technologies. With a total of nine patents to his name, Ushikawa has advanced the processes involved in forming various metallic films, which are crucial in semiconductor manufacturing and related applications.

Latest Patents

Ushikawa's latest inventions showcase his expertise in film formation. Among his notable patents are methods for forming nickel silicide (NiSi) films, silicide films, and metal films specifically for silicide-annealing applications. His innovative method for creating a silicide film includes a preannealing treatment to eliminate impurities, thereby enhancing the quality of the Ni film. Additionally, his techniques for forming cobalt (Co) and copper (Cu) films demonstrate his ability to integrate complex chemical processes for improved film deposition.

Career Highlights

Ushikawa currently works at Ulvac, Inc., where he continues to innovate and expand upon his knowledge in materials science and engineering. His dedication to research and development has positioned him as a prominent figure in his field, contributing significantly to advancements that directly impact semiconductor technologies.

Collaborations

Throughout his career, Ushikawa has collaborated with notable colleagues such as Satoru Toyoda and Narishi Gonohe. These collaborations have facilitated the exchange of ideas and expertise, further enhancing the quality and application of his inventions.

Conclusion

Harunori Ushikawa's contributions to the field of film-forming technologies reflect his innovative spirit and dedication to excellence. As he continues to develop new methodologies, Ushikawa’s work remains vital in pushing the boundaries of what is possible in semiconductor manufacturing and material science. His achievements inspire future generations of inventors and researchers alike.

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