The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2014
Filed:
Mar. 03, 2006
Narishi Gonohe, Shizuoka-ken, JP;
Satoru Toyoda, Shizuoka-ken, JP;
Harunori Ushikawa, Shizuoka-ken, JP;
Tomoyasu Kondo, Shizuoka-ken, JP;
Kyuzo Nakamura, Kanagawa-ken, JP;
Narishi Gonohe, Shizuoka-ken, JP;
Satoru Toyoda, Shizuoka-ken, JP;
Harunori Ushikawa, Shizuoka-ken, JP;
Tomoyasu Kondo, Shizuoka-ken, JP;
Kyuzo Nakamura, Kanagawa-ken, JP;
Ulvac, Inc., Kanagawa, JP;
Abstract
A tantalum nitride film rich in tantalum atoms is formed by simultaneously introducing a raw gas consisting of a coordination compound of elemental tantalum (Ta) having a coordinated ligand of formula: N═(R, R') (wherein, R and R′ each represents an alkyl group having 1 to 6 carbon atoms) and NHgas into a film-forming chamber; reacting the raw gas with the NHgas; forming a reduced compound having Ta—NHon a substrate; and introducing a hydrogen atom-containing gas into the chamber to form a tantalum nitride film rich in tantalum atoms. The resulting tantalum nitride film has a low resistance, low contents of C and N atoms, and a high compositional ratio: Ta/N, show sufficiently high adherence to Cu film and can thus be useful as a barrier film. Moreover, tantalum particles are implanted in the resulting film according to the sputtering technique to further enrich the film with tantalum.