The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Jul. 08, 2010
Applicants:

Nai-wei Liu, Fengshan, TW;

Zhen-cheng Wu, Hsinchu, TW;

Cheng-lin Huang, Hsinchu, TW;

Po-hsiang Huang, Taipei, TW;

Yung-chih Wang, Taoyuan, TW;

Shu-hui Su, Tucheng, TW;

Dian-hau Chen, Hsinchu, TW;

Yuh-jier Mii, Hsinchu, TW;

Inventors:

Nai-Wei Liu, Fengshan, TW;

Zhen-Cheng Wu, Hsinchu, TW;

Cheng-Lin Huang, Hsinchu, TW;

Po-Hsiang Huang, Taipei, TW;

Yung-Chih Wang, Taoyuan, TW;

Shu-Hui Su, Tucheng, TW;

Dian-Hau Chen, Hsinchu, TW;

Yuh-Jier Mii, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A copper interconnect includes a copper layer formed in a dielectric layer, having a first portion and a second portion. A first barrier layer is formed between the first portion of the copper layer and the dielectric layer. A second barrier layer is formed at the boundary between the second portion of the copper layer and the dielectric layer. The first barrier layer is a dielectric layer, and the second barrier layer is a metal oxide layer.


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