The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 03, 2013
Filed:
Aug. 25, 2011
Hung-chun Wang, Ching-Suei, TW;
Pei-shiang Chen, Hsinchu, TW;
Tzu-chin Lin, Hsinchu, TW;
Cheng-hung Chen, Changhua, TW;
Shih-chi Wang, Taipei, TW;
Nian-fuh Cheng, Hsinchu, TW;
Jeng-horng Chen, Hsin-Chu, TW;
Wen-chun Huang, Tainan, TW;
Ru-gun Liu, Hsinchu, TW;
Hung-Chun Wang, Ching-Suei, TW;
Pei-Shiang Chen, Hsinchu, TW;
Tzu-Chin Lin, Hsinchu, TW;
Cheng-Hung Chen, Changhua, TW;
Shih-Chi Wang, Taipei, TW;
Nian-Fuh Cheng, Hsinchu, TW;
Jeng-Horng Chen, Hsin-Chu, TW;
Wen-Chun Huang, Tainan, TW;
Ru-Gun Liu, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Provided is a method of performing a maskless lithography process. The method includes providing a proximity correction pattern. The method includes generating a deformed pattern based on the proximity correction pattern. The method includes performing a first convolution process to the proximity correction pattern to generate a first proximity correction pattern contour. The method includes processing the first proximity correction pattern contour to generate a second proximity correction pattern contour. The method includes performing a second convolution process to the deformed pattern to generate a first deformed pattern contour. The method includes processing the first deformed pattern contour to generate a second deformed pattern contour. The method includes identifying mismatches between the second proximity correction pattern contour and the second deformed pattern contour. The method includes determining whether the deformed pattern is lithography-ready in response to the identifying.