The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Feb. 16, 2011
Steven J. Keating, Beaverton, OR (US);
Nick Lindert, Beaverton, OR (US);
Nadia Rahhal-orabi, Hillsboro, OR (US);
Brian Doyle, Portland, OR (US);
Satyarth Suri, Hillsboro, OR (US);
Swaminathan Sivakumar, Beaverton, OR (US);
Lana Jong, Hillsboro, OR (US);
Lin Sha, Portland, OR (US);
Steven J. Keating, Beaverton, OR (US);
Nick Lindert, Beaverton, OR (US);
Nadia Rahhal-Orabi, Hillsboro, OR (US);
Brian Doyle, Portland, OR (US);
Satyarth Suri, Hillsboro, OR (US);
Swaminathan Sivakumar, Beaverton, OR (US);
Lana Jong, Hillsboro, OR (US);
Lin Sha, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method of patterning a metal () on a vertical sidewall () of an excavated feature () includes placing a material () in the excavated feature such that a portion () of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor () suitable for an eDRAM device.