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For the Inventor, By the Inventor

Portland, OR, United States of America

Lin Sha

This inventor holds 3 USPTO granted patents. Top assignee: Intel Corporation. Active years: 2011-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lin Sha. Retrieved from https://idiyas.com/inventor/lin-sha

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 3

Average Co-Inventor Count = 8.0

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:

goldMedal3 out of 56,394 
 
Intel Corporation
 patents

Years Active: 2011-2015

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3 patents (USPTO):Explore Patents
1. 9224794 - Embedded memory device having MIM capacitor formed in excavated structure (2015-12-29),
2. 8441057 - Embedded memory device having MIM capacitor formed in excavated structure (2013-05-14),
3. 7927959 - Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby (2011-04-19),

Title: Inventor Lin Sha - Revolutionizing Technology in Portland

Introduction: Lin Sha is a visionary inventor based in Portland, Oregon, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Lin Sha holds several patents in the areas of artificial intelligence, renewable energy, and sustainable technologies, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Lin Sha has worked with leading tech companies, research institutions, and universities to develop cutting-edge solutions that have revolutionized various industries.

Collaborations: Lin Sha has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Lin Sha's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and entrepreneurs.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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