Intel Corporation

Lin Sha

Brian S Doyle

Swaminathan Sivakumar

Nick Lindert

Nadia M Rahhal-Orabi

Satyarth Suri

Steven J Keating

Lana Jong

A method of patterning a metal () on a vertical sidewall () of an excavated feature () includes placing a material () in the excavated feature such that a portion () of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor () suitable for an eDRAM device.

Embedded memory device having MIM capacitor formed in excavated structure

Method of patterning a metal on a vertical sidewall of an excavated feature, method of forming an embedded MIM capacitor using same, and embedded memory device produced thereby

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Portland, OR, United States of America

Lin Sha