The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2013
Filed:
Jun. 25, 2010
Shem Ogadhoh, Beaverton, OR (US);
Raguraman Venkatesan, Portland, OR (US);
Kevin J. Hooker, Hillsboro, OR (US);
Sungwon Kim, Portland, OR (US);
Bin HU, Portland, OR (US);
Vivek Singh, Portland, OR (US);
Bikram Baidya, Hillsboro, OR (US);
Prasad Narendra Atkar, Hillsboro, OR (US);
Seongtae Jeong, Portland, OR (US);
Shem Ogadhoh, Beaverton, OR (US);
Raguraman Venkatesan, Portland, OR (US);
Kevin J. Hooker, Hillsboro, OR (US);
Sungwon Kim, Portland, OR (US);
Bin Hu, Portland, OR (US);
Vivek Singh, Portland, OR (US);
Bikram Baidya, Hillsboro, OR (US);
Prasad Narendra Atkar, Hillsboro, OR (US);
Seongtae Jeong, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Described herein is mask design and modeling for a set of masks to be successively imaged to print a composite pattern on a substrate, such as a semiconductor wafer. Further described herein is a method of double patterning a substrate with the set of masks. Also described herein is a method of correcting a drawn pattern of one of the mask levels based on a predicted pattern contour of the other of the mask levels. Also described herein is a method of modeling a resist profile contour for a mask level in which photoresist is applied onto a inhomogeneous substrate, as well as method of predicting a resist profile of a Boolean operation of two masks.