The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Aug. 31, 2010
Da-yuan Lee, Jhubei, TW;
Kuang-yuan Hsu, Fongyuan, TW;
Matt Yeh, Hsinchun, TW;
Yi-chen Huang, Hsin Chu, TW;
Fan-yi Hsu, Toufen Town, TW;
Hui Ouyang, Chubei, TW;
Ming-jie Huang, Hsinchu, TW;
Shin Hsien Liao, Minsyong Township, Chiayi County, TW;
Da-Yuan Lee, Jhubei, TW;
Kuang-Yuan Hsu, Fongyuan, TW;
Matt Yeh, Hsinchun, TW;
Yi-Chen Huang, Hsin Chu, TW;
Fan-Yi Hsu, Toufen Town, TW;
Hui Ouyang, Chubei, TW;
Ming-Jie Huang, Hsinchu, TW;
Shin Hsien Liao, Minsyong Township, Chiayi County, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor device is illustrated. A modified profile opening is formed on a substrate. The modified profile opening includes a first width proximate a surface of the substrate and a second width opposing the substrate. The second width is greater than the first width. A metal gate electrode is formed by filling the modified profile opening with a conductive material. A semiconductor device is also described, the device having a metal gate structure with a first width and a second, differing, width.