The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Mar. 31, 2010
Sandeep Nijhawan, Los Altos, CA (US);
Brian H. Burrows, San Jose, CA (US);
Tetsuya Ishikawa, Saratoga, CA (US);
Olga Kryliouk, Sunnyvale, CA (US);
Anand Vasudev, San Francisco, CA (US);
Jie Su, Santa Clara, CA (US);
David H. Quach, San Jose, CA (US);
Anzhong Chang, San Jose, CA (US);
Yuriy Melnik, Santa Clara, CA (US);
Harsukhdeep S. Ratia, Santa Clara, CA (US);
Son T. Nguyen, San Jose, CA (US);
Lily Pang, Fremont, CA (US);
Sandeep Nijhawan, Los Altos, CA (US);
Brian H. Burrows, San Jose, CA (US);
Tetsuya Ishikawa, Saratoga, CA (US);
Olga Kryliouk, Sunnyvale, CA (US);
Anand Vasudev, San Francisco, CA (US);
Jie Su, Santa Clara, CA (US);
David H. Quach, San Jose, CA (US);
Anzhong Chang, San Jose, CA (US);
Yuriy Melnik, Santa Clara, CA (US);
Harsukhdeep S. Ratia, Santa Clara, CA (US);
Son T. Nguyen, San Jose, CA (US);
Lily Pang, Fremont, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.