The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
May. 23, 2008
Helen Wang, LaGrangeville, NY (US);
Scott D. Halle, Hopewell Junction, NY (US);
Henning Haffner, Pawling, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Klaus Herold, Poughquag, NY (US);
Matthew E. Colburn, Schenectady, NY (US);
Allen H. Gabor, Katonah, NY (US);
Zachary Baum, Gardiner, NY (US);
Scott M. Mansfield, Hopewell Junction, NY (US);
Jason E. Meiring, New Fairfield, CT (US);
Helen Wang, LaGrangeville, NY (US);
Scott D. Halle, Hopewell Junction, NY (US);
Henning Haffner, Pawling, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Klaus Herold, Poughquag, NY (US);
Matthew E. Colburn, Schenectady, NY (US);
Allen H. Gabor, Katonah, NY (US);
Zachary Baum, Gardiner, NY (US);
Scott M. Mansfield, Hopewell Junction, NY (US);
Jason E. Meiring, New Fairfield, CT (US);
Infineon Technologies AG, Neubiberg, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
Integrated circuits and methods of manufacture and design thereof are disclosed. For example, a method of manufacturing includes depositing a gate material over a semiconductor substrate, and depositing a first resist layer over the gate material. A first mask is used to pattern the first resist layer to form first and second resist features. The first resist features include pattern for gate lines of the semiconductor device and the second resist features include printing assist features. A second mask is used to form a resist template; the second mask removes the second resist features.