The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2011
Filed:
Jul. 10, 2008
Tse-en Chang, Hsinchu, TW;
Chih-fu Chang, Neipu Township, TW;
Bone-fong Wu, Hsinchu, TW;
Chieh Chih Ting, Hsinchu, TW;
Shao Hua Wang, Hsinchu, TW;
Pu-fang Chen, Hsinchu, TW;
Yen Chuang, Taipei, TW;
Tse-En Chang, Hsinchu, TW;
Chih-Fu Chang, Neipu Township, TW;
Bone-Fong Wu, Hsinchu, TW;
Chieh Chih Ting, Hsinchu, TW;
Shao Hua Wang, Hsinchu, TW;
Pu-Fang Chen, Hsinchu, TW;
Yen Chuang, Taipei, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Abstract
A method of forming a dopant implant region in a MOS transistor device having a dopant profile having a target dopant concentration includes implanting a first concentration of dopants into a region of a substrate, where the first concentration of dopants is less than the target dopant concentration, and without annealing the substrate after the implanting step, performing at least one second implanting step to implant at least one second concentration of dopants into the region of the substrate to bring the dopant concentration in the region to the target dopant concentration.