Tse-En Chang

Title: Innovations of Tse-En Chang: Pioneering Advances in MOS Transistor Technology

Introduction: Tse-En Chang, an accomplished inventor based in Hsinchu, Taiwan, has made significant contributions to the semiconductor industry. With his innovative mindset, he has successfully secured a patent that enhances the manufacturing processes of MOS transistors, an essential component in modern electronics.

Latest Patents: Tse-En Chang is credited with the patent titled "Dopant Implantation Method Using Multi-Step Implants." This groundbreaking method involves forming a dopant implant region in a MOS transistor device with a specific dopant profile. It focuses on implanting a first concentration of dopants into a substrate region, without the need for subsequent annealing. Following this, the method utilizes at least one additional implanting step to achieve the desired target dopant concentration in the region, thereby optimizing the performance of MOS transistors.

Career Highlights: Currently, Tse-En Chang is employed at Taiwan Semiconductor Manufacturing Company Limited, a leading entity in the semiconductor fabrication industry. His role involves innovating and improving processes that directly impact the efficiency and effectiveness of transistor manufacturing.

Collaborations: Throughout his career, Tse-En Chang has had the opportunity to collaborate with esteemed colleagues, including Chih-Fu Chang and Bone-Fong Wu. This teamwork has fostered an environment of shared knowledge and innovation, further propelling advancements in semiconductor technologies.

Conclusion: Tse-En Chang's inventive spirit and dedication to the semiconductor field exemplify how individual contributions can lead to significant advancements in technology. His patent on dopant implantation methods not only reflects his expertise but also plays a crucial role in the thriving landscape of electronic devices.