The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2011
Filed:
Jul. 30, 2009
Hiromichi Isogai, Niigata, JP;
Takeshi Senda, Niigata, JP;
Eiji Toyoda, Niigata, JP;
Kumiko Murayama, Niigata, JP;
Koji Izunome, Niigata, JP;
Susumu Maeda, Kanagawa, JP;
Kazuhiko Kashima, Kanagawa, JP;
Hiromichi Isogai, Niigata, JP;
Takeshi Senda, Niigata, JP;
Eiji Toyoda, Niigata, JP;
Kumiko Murayama, Niigata, JP;
Koji Izunome, Niigata, JP;
Susumu Maeda, Kanagawa, JP;
Kazuhiko Kashima, Kanagawa, JP;
Covalent Materials Corporation, Tokyo, JP;
Abstract
In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.