The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 22, 2011

Filed:

Feb. 17, 2006
Applicants:

Ji Soo Kim, Pleasanton, CA (US);

Peter Cirigliano, Sunnyvale, CA (US);

Sangheon Lee, Sunnyvale, CA (US);

Dongho Heo, Fremont, CA (US);

Daehan Choi, Sunnyvale, CA (US);

S. M. Reza Sadjadi, Saratoga, CA (US);

Inventors:

Ji Soo Kim, Pleasanton, CA (US);

Peter Cirigliano, Sunnyvale, CA (US);

Sangheon Lee, Sunnyvale, CA (US);

Dongho Heo, Fremont, CA (US);

Daehan Choi, Sunnyvale, CA (US);

S. M. Reza Sadjadi, Saratoga, CA (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for etching features into an etch layer disposed below a photoresist mask without an intermediate hardmask is provided. A plurality of etch cycles are provided. Each etch cycle comprises providing a deposition etch phase that etches features into the etch layer and deposits polymer on sidewalls of the features and over the photoresist and providing a cleaning phase that removes polymer deposited on the sidewalls.


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