The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 25, 2010
Filed:
Nov. 12, 2007
Nanchang Zhu, Shanghai, CN;
Jainou Shi, Milpitas, CA (US);
Min Xiang, Shanghai, CN;
Zianghua Liu, Shanghai, CN;
Goujun Zhang, Shanghai, CN;
Xiafang Zhang, San Jose, CA (US);
Shiyou Pei, Saratoga, CA (US);
Liang-guo Wang, San Jose, CA (US);
Joseph R. Laia, Jr., Morgan Hill, CA (US);
NanChang Zhu, Shanghai, CN;
Jainou Shi, Milpitas, CA (US);
Min Xiang, Shanghai, CN;
ZiangHua Liu, Shanghai, CN;
Goujun Zhang, Shanghai, CN;
Xiafang Zhang, San Jose, CA (US);
Shiyou Pei, Saratoga, CA (US);
Liang-Guo Wang, San Jose, CA (US);
Joseph R. Laia, Jr., Morgan Hill, CA (US);
KLA-Tencor Corporation, Milpitas, CA (US);
Abstract
A measurement system for taking a reading in a test zone on a surface of a substrate. A chamber forms an environment, a surface treatment station dispenses a stabilizing chemical in the test zone, a charge deposition station deposits a charge in the test zone, and a QV measurement station takes a QV based measurement in the test zone. Where the surface treatment station, the charge deposition station, and the QV measurement station all interact with the substrate within the chamber. In this manner, reliable QV measurements are taken on the substrate by controlling charge spreading with the stabilizing chemical. QV measurement stability is also improved by reducing the influence of the time trending on substrates with reactive dielectrics, such as on silicon oxynitride and high-k surfaces.