The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 30, 2008
Filed:
Mar. 11, 2005
Dae Hyung Kim, Gyeonggi-Do, KR;
Seok Min Hong, Gyeonggi-Do, KR;
Jae Hyun Jeon, Gyeonsangbuk-Do, KR;
Ho Seong Kim, Gyeonggi-Do, KR;
Hyun Soo Park, Gyeonggi-Do, KR;
Un Gyu Paik, Seoul, KR;
Jae Gun Park, Gyeonggi-Do, KR;
Yong Kuk Kim, Seoul, KR;
Dae Hyung Kim, Gyeonggi-Do, KR;
Seok Min Hong, Gyeonggi-Do, KR;
Jae Hyun Jeon, Gyeonsangbuk-Do, KR;
Ho Seong Kim, Gyeonggi-Do, KR;
Hyun Soo Park, Gyeonggi-Do, KR;
Un Gyu Paik, Seoul, KR;
Jae Gun Park, Gyeonggi-Do, KR;
Yong Kuk Kim, Seoul, KR;
K.C. Tech Co., Ltd., Anseong-si, KR;
IUCF-HYU, Seoul, KR;
Abstract
Disclosed herein is a polishing slurry for chemical mechanical polishing. The polishing slurry comprises polishing particles, which have a particle size distribution including separated fine and large polishing particle peaks. The polishing slurry also comprises polishing particles, which have a median size of 50-150 nm. The present invention provides the slurry having an optimum polishing particle size, in which the polishing particle size is controlled and which is useful to produce semiconductors having fine design rules by changing the production conditions of the slurry. The present invention also provides the polishing slurry and a method of producing the same, in which a desirable CMP removal rate is assured and scratches are suppressed by controlling a polishing particle size distribution, and a method of polishing a substrate.