The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2008
Filed:
Dec. 17, 2003
Yoshiki Igarashi, Yamanashi, JP;
Kouichiro Inazawa, Peabody, MA (US);
Kimihiro Higuchi, Yamanashi, JP;
Vaidyanathan Balasubramaniam, Beverly, MA (US);
Eiichi Nishimura, Malden, MA (US);
Ralph Kim, Beverly, MA (US);
Philip Sansone, Atkinson, NH (US);
Masaaki Hagihara, Beverly, MA (US);
Yoshiki Igarashi, Yamanashi, JP;
Kouichiro Inazawa, Peabody, MA (US);
Kimihiro Higuchi, Yamanashi, JP;
Vaidyanathan Balasubramaniam, Beverly, MA (US);
Eiichi Nishimura, Malden, MA (US);
Ralph Kim, Beverly, MA (US);
Philip Sansone, Atkinson, NH (US);
Masaaki Hagihara, Beverly, MA (US);
Tokyo Electron Limited, , JP;
Abstract
A method for etching an organic anti-reflective coating (ARC) layer on a substrate in a plasma processing system comprising: introducing a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O); forming a plasma from the process gas; and exposing the substrate to the plasma. The process gas can, for example, constitute an NH/O, N/H/O, N/H/CO, NH/CO, or NH/CO/Obased chemistry. Additionally, the process chemistry can further comprise the addition of helium. The present invention further presents a method for forming a bilayer mask for etching a thin film on a substrate, wherein the method comprises: forming the thin film on the substrate; forming an ARC layer on the thin film; forming a photoresist pattern on the ARC layer; and transferring the photoresist pattern to the ARC layer with an etch process using a process gas comprising nitrogen (N), hydrogen (H), and oxygen (O).