The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2008

Filed:

Mar. 28, 2005
Applicants:

Jian MA, San Jose, CA (US);

Phil Freiberger, Santa Clara, CA (US);

Karmen Yung, Sunnyvale, CA (US);

Frederick Chen, Cupertino, CA (US);

Chaoyang LI, San Jose, CA (US);

Steve Mak, Pleasanton, CA (US);

Inventors:

Jian Ma, San Jose, CA (US);

Phil Freiberger, Santa Clara, CA (US);

Karmen Yung, Sunnyvale, CA (US);

Frederick Chen, Cupertino, CA (US);

Chaoyang Li, San Jose, CA (US);

Steve Mak, Pleasanton, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/42 (2006.01); G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An imaging structure such as a mask or reticle may be fabricated using a patterning layer on an imaging layer. The patterning layer may have substantially different etch properties than the imaging layer. A first etch process may be selective of the patterning layer with respect to a resist layer. A second etch process may be selective of the imaging layer with respect to the patterning layer.


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