Sunnyvale, CA, United States of America

Karmen Yung

This inventor holds 2 USPTO granted patents. Top assignee: Intel Corporation. Active years: 2008-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Karmen Yung. Retrieved from https://idiyas.com/inventor/karmen-yung

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

Average Co-Inventor Count = 6.0

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Company Filing History:


Years Active: 2008-2014

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2 patents (USPTO):Explore Patents

Title: Karmen Yung: Semiconductor Mask Patterning Inventor

Introduction

Karmen Yung is an inventor based in Sunnyvale, California, and works at Intel Corporation. Her patent work includes techniques for fabricating imaging structures such as masks and reticles. Yung is credited with 2 patents.

Latest Patents

Yung’s listed latest patent is “Advanced Mask Patterning with Patterning Layer.” The invention describes fabricating an imaging structure using a patterning layer placed on an imaging layer. Because the layers can have substantially different etch properties, the process uses separate etching steps: one selective to the patterning layer relative to a resist layer, and another selective to the imaging layer relative to the patterning layer. This approach provides a method for patterning masks or reticles.

Career Highlights

At Intel Corporation, Yung’s patent work addresses advanced patterning processes relevant to semiconductor manufacturing. The described technique focuses on controlling etching across multiple layers to form imaging structures.

Collaborations

Yung’s listed coworkers include Chaoyang Li and Frederick Chen. Their names are associated with her professional context, though the supplied information does not specify particular joint projects.

Conclusion

Karmen Yung’s patent work at Intel Corporation centers on advanced mask patterning, including a layered etching approach for fabricating imaging structures.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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