The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 05, 2008
Filed:
Feb. 24, 2005
Martin Jay Seamons, San Jose, CA (US);
Wendy H. Yeh, Mountain View, CA (US);
Sudha S. R. Rathi, San Jose, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Andy (Hsin Chiao) Luan, Palo Alto, CA (US);
Sum-yee Betty Tang, San Jose, CA (US);
Priya Kulkarni, Santa Clara, CA (US);
Visweswaren Sivaramakrishnan, Santa Clara, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Hichem M'saad, Santa Clara, CA (US);
Yuxiang May Wang, Sunnyvale, CA (US);
Michael Chiu Kwan, Sunnyvale, CA (US);
Martin Jay Seamons, San Jose, CA (US);
Wendy H. Yeh, Mountain View, CA (US);
Sudha S. R. Rathi, San Jose, CA (US);
Deenesh Padhi, Sunnyvale, CA (US);
Andy (Hsin Chiao) Luan, Palo Alto, CA (US);
Sum-Yee Betty Tang, San Jose, CA (US);
Priya Kulkarni, Santa Clara, CA (US);
Visweswaren Sivaramakrishnan, Santa Clara, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Hichem M'Saad, Santa Clara, CA (US);
Yuxiang May Wang, Sunnyvale, CA (US);
Michael Chiu Kwan, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.