The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 15, 2008
Filed:
Mar. 08, 2005
Chun Chieh Lin, Taichung, TW;
Yee-chia Yeo, Albany, CA (US);
Chien-chao Huang, Hsin-Chu, TW;
Chao-hsiung Wang, Hsin-Chu, TW;
Tien-chih Chang, Taipei, TW;
Chenming HU, Alamo, CA (US);
Fu-liang Yang, Taipei, TW;
Shih-chang Chen, Taoyuan, TW;
Mong-song Liang, Hsin-Chu, TW;
Liang-gi Yao, Hsin-Chu, TW;
Chun Chieh Lin, Taichung, TW;
Yee-Chia Yeo, Albany, CA (US);
Chien-Chao Huang, Hsin-Chu, TW;
Chao-Hsiung Wang, Hsin-Chu, TW;
Tien-Chih Chang, Taipei, TW;
Chenming Hu, Alamo, CA (US);
Fu-Liang Yang, Taipei, TW;
Shih-Chang Chen, Taoyuan, TW;
Mong-Song Liang, Hsin-Chu, TW;
Liang-Gi Yao, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Hsin-Chu, TW;
Abstract
A method of forming a strained silicon layer on a relaxed, low defect density semiconductor alloy layer such as SiGe is provided.