The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 2007
Filed:
Jun. 03, 2004
Seokmin Yun, Pleasanton, CA (US);
Ji Zhu, El Cerrito, CA (US);
Peter Cirigliano, Sunnyvale, CA (US);
Sangheon Lee, San Jose, CA (US);
Thomas S. Choi, San Jose, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Mark H. Wilcoxson, Piedmont, CA (US);
Reza Sadjadi, Saratoga, CA (US);
Eric A. Hudson, Berkeley, CA (US);
James V. Tietz, Fremont, CA (US);
Seokmin Yun, Pleasanton, CA (US);
Ji Zhu, El Cerrito, CA (US);
Peter Cirigliano, Sunnyvale, CA (US);
Sangheon Lee, San Jose, CA (US);
Thomas S. Choi, San Jose, CA (US);
Peter Loewenhardt, Pleasanton, CA (US);
Mark H. Wilcoxson, Piedmont, CA (US);
Reza Sadjadi, Saratoga, CA (US);
Eric A. Hudson, Berkeley, CA (US);
James V. Tietz, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching a feature in a low-k dielectric layer through a photoresist etch mask over a substrate. A gas-modulated cyclic stripping process is performed for more than three cycles for stripping a single photoresist mask. Each cycle of the gas-modulated cyclic stripping process comprises performing a protective layer formation phase and a stripping phase. The protective layer forming phase using first gas chemistry with a deposition gas chemistry, wherein the protective layer forming phase is performed in about 0.005 to 10 seconds for each cycle. The performing the stripping phase for stripping the photoresist mask using a second gas chemistry using a stripping gas chemistry, where the first gas chemistry is different than the second gas chemistry, wherein the etching phase is performed in about 0.005 to 10 seconds for each cycle.