The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 06, 2007
Filed:
Jun. 27, 2003
Helene Del Puppo, Fremont, CA (US);
Frank Lin, Fremont, CA (US);
Chris Lee, Oakland, CA (US);
Vahid Vahedi, Albany, CA (US);
Thomas A. Kamp, San Jose, CA (US);
Alan J. Miller, Moraga, CA (US);
Saurabh Ullal, South San Francisco, CA (US);
Harmeet Singh, Fremont, CA (US);
Helene Del Puppo, Fremont, CA (US);
Frank Lin, Fremont, CA (US);
Chris Lee, Oakland, CA (US);
Vahid Vahedi, Albany, CA (US);
Thomas A. Kamp, San Jose, CA (US);
Alan J. Miller, Moraga, CA (US);
Saurabh Ullal, South San Francisco, CA (US);
Harmeet Singh, Fremont, CA (US);
Lam Research Corporation, Fremont, CA (US);
Abstract
A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.