The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2006
Filed:
May. 26, 2004
Justin K. Brask, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Mark L. Doczy, Beaverton, OR (US);
Matthew V. Metz, Hillsboro, OR (US);
Uday Shah, Portland, OR (US);
Chris E. Barns, Portland, OR (US);
Suman Datta, Beaverton, OR (US);
Robert B. Turkot, Jr., Hillsboro, OR (US);
Robert S. Chau, Beaverton, OR (US);
Justin K. Brask, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Mark L. Doczy, Beaverton, OR (US);
Matthew V. Metz, Hillsboro, OR (US);
Uday Shah, Portland, OR (US);
Chris E. Barns, Portland, OR (US);
Suman Datta, Beaverton, OR (US);
Robert B. Turkot, Jr., Hillsboro, OR (US);
Robert S. Chau, Beaverton, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
A method for making a semiconductor device is described. That method comprises forming on a substrate a first gate dielectric layer that has a first substantially vertical component, then forming a first metal layer on the first gate dielectric layer. After forming on the substrate a second gate dielectric layer that has a second substantially vertical component, a second metal layer is formed on the second gate dielectric layer. In this method, a conductor is formed that contacts both the first metal layer and the second metal layer.