The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 11, 2006
Filed:
Mar. 06, 2003
Hiroyuki Shinada, Chofu, JP;
Mari Nozoe, Ome, JP;
Haruo Yoda, Tokyo, JP;
Kimiaki Ando, Hamura, JP;
Katsuhiro Kuroda, Hachioji, JP;
Yutaka Kaneko, Hachioji, JP;
Maki Tanaka, Yokohama, JP;
Shunji Maeda, Yokohama, JP;
Hitoshi Kubota, Fujisawa, JP;
Aritoshi Sugimoto, Tokyo, JP;
Katsuya Sugiyama, Kashiwa, JP;
Atsuko Takafuji, Tokyo, JP;
Yusuke Yajima, Kodaira, JP;
Hiroshi Tooyama, Hachioji, JP;
Tadao Ino, Hino, JP;
Takashi Hiroi, Yokohama, JP;
Kazushi Yoshimura, Kamakura, JP;
Yasutsugu Usami, Hitachinaka, JP;
Hiroyuki Shinada, Chofu, JP;
Mari Nozoe, Ome, JP;
Haruo Yoda, Tokyo, JP;
Kimiaki Ando, Hamura, JP;
Katsuhiro Kuroda, Hachioji, JP;
Yutaka Kaneko, Hachioji, JP;
Maki Tanaka, Yokohama, JP;
Shunji Maeda, Yokohama, JP;
Hitoshi Kubota, Fujisawa, JP;
Aritoshi Sugimoto, Tokyo, JP;
Katsuya Sugiyama, Kashiwa, JP;
Atsuko Takafuji, Tokyo, JP;
Yusuke Yajima, Kodaira, JP;
Hiroshi Tooyama, Hachioji, JP;
Tadao Ino, Hino, JP;
Takashi Hiroi, Yokohama, JP;
Kazushi Yoshimura, Kamakura, JP;
Yasutsugu Usami, Hitachinaka, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
To make possible the in-line inspection of a pattern of an insulating material. A patterned waferformed with a pattern by a resist film is placed on a specimen tableof a patterned wafer inspection apparatusin opposed relation to a SEM. An electron beamof a large current is emitted from an electron gunand the pattern of the patterned wafer is scanned only once at a high scanning rate. The secondary electrons generated by this scanning from the patterned wafer are detected by a secondary electron detectorthereby to acquire an electron beam image. Using this electron beam image, the comparative inspection is conducted on the patterned wafer through an arithmetic operation unitand a defect determining unitSince an electron beam image of high contrast can be obtained by scanning an electron beam only once, a patterned wafer inspection method using a SEM can be implemented in the IC fabrication method.