The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2005
Filed:
Dec. 10, 2003
Bok Hoen Kim, San Jose, CA (US);
Sudha Rathi, San Jose, CA (US);
Sang H. Ahn, Foster City, CA (US);
Christopher D. Bencher, San Jose, CA (US);
Yuxiang May Wang, Palo alto, CA (US);
Hichem M'saad, Santa clara, CA (US);
Mario D. Silvetti, Morgan Hill, CA (US);
Miguel Fung, Redwood City, CA (US);
Keebum Jung, Gilroy, CA (US);
Lei Zhu, Sunnyvale, CA (US);
Bok Hoen Kim, San Jose, CA (US);
Sudha Rathi, San Jose, CA (US);
Sang H. Ahn, Foster City, CA (US);
Christopher D. Bencher, San Jose, CA (US);
Yuxiang May Wang, Palo alto, CA (US);
Hichem M'Saad, Santa clara, CA (US);
Mario D. Silvetti, Morgan Hill, CA (US);
Miguel Fung, Redwood City, CA (US);
Keebum Jung, Gilroy, CA (US);
Lei Zhu, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.