The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 02, 2005
Filed:
Sep. 30, 2003
Hideaki Yamasaki, Kofu, JP;
Tsukasa Matsuda, Yamanashi, JP;
Atsushi Gomi, Yamanashi, JP;
Tatsuo Hatano, Ryuo, JP;
Mitsuhiro Tachibana, Nakakoma-gun, JP;
Koumei Matsuzava, Nirasaki, JP;
Yumiko Kawano, Kofu, JP;
Gert J Leusink, Saltpoint, NY (US);
Fenton R Mcfeely, Ossining, NY (US);
Sandra G. Malhotra, Beacon, NY (US);
Andrew H Simon, Fishkill, NY (US);
John J Yurkas, Stamford, CT (US);
Hideaki Yamasaki, Kofu, JP;
Tsukasa Matsuda, Yamanashi, JP;
Atsushi Gomi, Yamanashi, JP;
Tatsuo Hatano, Ryuo, JP;
Mitsuhiro Tachibana, Nakakoma-gun, JP;
Koumei Matsuzava, Nirasaki, JP;
Yumiko Kawano, Kofu, JP;
Gert J Leusink, Saltpoint, NY (US);
Fenton R McFeely, Ossining, NY (US);
Sandra G. Malhotra, Beacon, NY (US);
Andrew H Simon, Fishkill, NY (US);
John J Yurkas, Stamford, CT (US);
Tokyo Electron Limited, Tokyo, JP;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.