This inventor holds 1 USPTO granted patent. Top assignees: International Business Machines Corporation, Tokyo Electron Limited. Active years: 2005.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
1 out of 166,409 
1 out of 10,918 
Years Active: 2005
Title: Innovations of Koumei Matsuzava: A Trailblazer in Metal Layer Formation
Introduction: Koumei Matsuzava, an inventive mind hailing from Nirasaki, Japan, has made significant contributions to the field of materials science with his innovative approach to forming metal layers. With a single patent to his name, he has implemented a unique method that utilizes an intermittent precursor gas flow process, showcasing his expertise in the realm of semiconductor manufacturing.
Latest Patents: Matsuzava's notable patent is titled "Method of forming a metal layer using an intermittent precursor gas flow process." This innovative method involves exposing a substrate to a reducing gas while simultaneously introducing pulses of a metal-carbonyl precursor gas. The procedure continues until the desired thickness of the metal layer is achieved, which can either be directly applied to the substrate or built upon a metal nucleation layer. This advancement has implications for enhancing the efficiency and precision of metal deposition in various industrial applications.
Career Highlights: Throughout his career, Koumei Matsuzava has worked with prestigious organizations, furthering his research and practical applications in semiconductor technology. Notably, he has been affiliated with Tokyo Electron Limited and IBM, where he honed his skills and contributed to groundbreaking advancements in the field.
Collaborations: Matsuzava has collaborated with talented professionals including Hideaki Yamasaki and Tsukasa Matsuda. These partnerships have fostered a collective pursuit of innovation, refreshing existing methodologies and contributing to the overall progress in technology development.
Conclusion: Koumei Matsuzava stands out as a significant figure in the world of innovations related to metal layer formation. His patent reflects a keen understanding of the complexities involved in semiconductor processing and his commitment to enhancing manufacturing techniques. As research in materials science continues to evolve, Matsuzava's work remains a vital point of reference for aspiring inventors and industry professionals alike.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile