The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2005
Filed:
May. 21, 2003
H. Wally Lee, Feng-Shan, TW;
Ching-ping Wu, Taipei, TW;
Han-maou Chang, Taipei, TW;
MA Chia-chih, Hsinchu, TW;
Nan-tzu Lian, Hsinchu, TW;
Hsin-cheng Liu, Hsinchu, TW;
H. Wally Lee, Feng-Shan, TW;
Ching-Ping Wu, Taipei, TW;
Han-Maou Chang, Taipei, TW;
Ma Chia-Chih, Hsinchu, TW;
Nan-Tzu Lian, Hsinchu, TW;
Hsin-Cheng Liu, Hsinchu, TW;
Abstract
A method of removing HDP oxide deposition comprises the steps of: (1) etching the HDP oxide deposition by in-side-out model, wherein the etching rate in the center of the substrate is faster than the edges of the substrate; (2) etching the HDP oxide deposition by out-side-in model, wherein the etching rate in the edges of the substrate is faster than the center of the substrate; and (3) removing the remaining silicon oxide layer using chemical-mechanical polishing (CMP). According to the method of the invention, the HDP oxide deposition can be planarized more uniform.