Han-Maou Chang

Title: Han-Maou Chang: Innovator in HDP Oxide Deposition Removal

Introduction

Han-Maou Chang is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of high-density plasma (HDP) oxide deposition. His innovative methods have the potential to enhance the efficiency and quality of semiconductor devices.

Latest Patents

Han-Maou Chang holds a patent for a method of removing HDP oxide deposition. This method involves several key steps: first, etching the HDP oxide deposition using an in-side-out model, where the etching rate in the center of the substrate is faster than at the edges. Second, it employs an out-side-in model, where the etching rate at the edges is faster than in the center. Finally, the remaining silicon oxide layer is removed using chemical-mechanical polishing (CMP). This approach allows for a more uniform planarization of the HDP oxide deposition.

Career Highlights

Chang is currently associated with Macronix International Co., Ltd., a company known for its advancements in memory and storage solutions. His work at Macronix has positioned him as a key player in the semiconductor industry, contributing to the development of innovative technologies.

Collaborations

Throughout his career, Han-Maou Chang has collaborated with esteemed colleagues, including H Wally Lee and Ching-Ping Wu. These collaborations have fostered a productive environment for innovation and have led to advancements in semiconductor manufacturing techniques.

Conclusion

Han-Maou Chang's contributions to the field of HDP oxide deposition removal exemplify his commitment to innovation in semiconductor technology. His patent and work at Macronix International Co., Ltd. highlight his role as a significant inventor in this critical industry.