Nan-Tzu Lian

Title: The Innovative Contributions of Nan-Tzu Lian

Introduction

Nan-Tzu Lian is a notable inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the area of oxide deposition. His work has implications for improving manufacturing processes in the electronics industry.

Latest Patents

Nan-Tzu Lian holds a patent for a method of removing HDP oxide deposition. This innovative method involves several steps: first, etching the HDP oxide deposition using an in-side-out model, where the etching rate in the center of the substrate is faster than at the edges. Second, it employs an out-side-in model, where the etching rate at the edges is faster than in the center. Finally, the remaining silicon oxide layer is removed using chemical-mechanical polishing (CMP). This method allows for a more uniform planarization of HDP oxide deposition.

Career Highlights

Lian is currently associated with Macronix International Co., Ltd., a company known for its advancements in memory solutions. His work at Macronix has been pivotal in enhancing the efficiency and effectiveness of semiconductor manufacturing processes.

Collaborations

Throughout his career, Nan-Tzu Lian has collaborated with esteemed colleagues, including H Wally Lee and Ching-Ping Wu. These collaborations have further enriched his contributions to the field.

Conclusion

Nan-Tzu Lian's innovative methods and collaborations have made a significant impact on semiconductor technology. His patent for the method of removing HDP oxide deposition exemplifies his commitment to advancing the industry.