H Wally Lee

Title: H Wally Lee: Innovator in HDP Oxide Deposition Removal

Introduction

H Wally Lee is a notable inventor based in Feng Shan, Taiwan. He has made significant contributions to the field of semiconductor manufacturing, particularly in the area of high-density plasma (HDP) oxide deposition. His innovative methods have the potential to enhance the efficiency and quality of semiconductor devices.

Latest Patents

H Wally Lee holds a patent for a method of removing HDP oxide deposition. This method involves a three-step process: first, etching the HDP oxide deposition using an in-side-out model, where the etching rate in the center of the substrate is faster than at the edges. Second, it employs an out-side-in model, where the etching rate at the edges is faster than in the center. Finally, the remaining silicon oxide layer is removed using chemical-mechanical polishing (CMP). This approach allows for a more uniform planarization of the HDP oxide deposition.

Career Highlights

H Wally Lee is associated with Macronix International Co., Ltd., a company known for its advancements in memory and storage solutions. His work at Macronix has been instrumental in developing innovative techniques that improve manufacturing processes in the semiconductor industry.

Collaborations

H Wally Lee has collaborated with notable colleagues, including Ching-Ping Wu and Han-Maou Chang. These collaborations have fostered a productive environment for innovation and have contributed to the advancement of semiconductor technologies.

Conclusion

H Wally Lee's contributions to the field of semiconductor manufacturing, particularly through his patented method for removing HDP oxide deposition, highlight his role as an innovator. His work continues to influence the industry and improve manufacturing processes.